SI2311DS trenchfet power mosfet
load switch v ds (v) r ds(on) ( ) i d (a) 0.045 @ v gs = ?4.5 v ?3.5 ?8 0.072 @ v gs = ?2.5 v ?2.8 0.120 @ v gs = ?1.8 v ?2.0 g s d top view 2 3 to-236 (sot-23) 1 SI2311DS (c1)* *marking code
parameter symbol 5 sec steady state unit drain-source voltage v ds ?8 gate-source voltage v gs 8 v a, b t a = 25 c ?3.5 ?3.0 continuous drain current (t j = 150 c) a, b t a = 70 c i d ?2.8 ?2.4 pulsed drain current i dm ?10 a continuous source current (diode conduction) a, b i s ?0.8 ?0.6 t a = 25 c 0.96 0.71 maximum power dissipation) a, b t a = 70 c p d 0.62 0.46 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol typical maximum unit t 5 sec 100 130 maximum junction-to-ambient a steady state r thja 140 175 c/w maximum junction-to-foot (drain) steady state r thjf 60 75 c/w notes a. surface mounted on fr4 board. b. pulse width limited by maximum junction temperature. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 10 a ? 8 gate-threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 ? 0.8 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 6.4 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 6.4 v, v gs = 0 v, t j = 55 c ? 10 a v ds ? 5 v, v gs = ? 4.5 v ? 6 on-state drain current a i d(on) v ds ? 5 v, v gs = ? 2.5 v ? 3 a v gs = ? 4.5 v, i d = ? 3.5 a 0.036 0.045 drain-source on-resistance a r ds(on) v gs = ? 2.5 v, i d = ? 3 a 0.058 0.072 v gs = ? 1.8 v, i d = ? 0.7 a 0.096 0.120 forward transconductance a g fs v ds = ? 5 v, i d = ? 3.5 a 9.0 s diode forward voltage v sd i s = ? 0.8 a, v gs = 0 v ? 1.2 v dynamic b total gate charge q g 8.5 12 gate-source charge q gs v ds = ? 4 v, v gs = ? 4.5 v i d ? 3.5 a 1.5 nc gate-drain charge q gd i d ? 3.5 a 2.1 input capacitance c iss 970 output capacitance c oss v ds = ? 4 v, v gs = 0, f = 1 mhz 485 pf reverse transfer capacitance c rss 160 switching b t d(on) 18 25 turn-on time t r v dd = ? 4 v, r l = 4 45 65 t d(off) i d ? 1.0 a, v gen = ? 4.5 v r g = 6 40 60 ns turn-off time t f 45 65 notes a. for design aid only, not subject to production testing. b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature. SI2311DS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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